WebEmploying high-k dielectrics as gate oxide is being a meticulous approach today on attaining an enhanced device. The objective of this work is to develop and characterize a 14 nm gate length Tri-Gate n-FinFET device and compare the effects of short channel parameters. This is achieved by replacing the SiO 2 gate oxide with various high-k dielec- Web6 de abr. de 2024 · In this study, we developed a facilitated ferroelectric high-k/metal-gate n-type FinFET based on Hf0.5Zr0.5O2. We investigated the impact of the hysteresis effect on device characteristics of various fin-widths and the degradation induced by stress on the ferroelectric FinFET (Fe-FinFET). We clarified the electrical characteristics of the device …
FinFET with High-κ Spacers for Improved Drive Current
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High-Voltage Drain-Extended FinFET With a High- ${k}$ Dielectric …
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